Memory system with dynamic calibration using a trim management mechanism

ABSTRACT

A system comprises a memory device comprising a plurality of memory cells; and a processing device coupled to the memory device, the processing device configured to iteratively: calibrate read levels based on associated read results, wherein the read levels are tracked via optimization target data that at least initially includes at least one read level in addition to a target trim; and remove a calibrated read level from the optimization target data when the calibrated read level satisfies a calibration condition.

CROSS-REFERENCE TO RELATED APPLICATION(S)

This application is a continuation of U.S. application Ser. No.15/981,810, filed May 16, 2018; which is incorporated herein byreference in its entirety.

This application contains subject matter related to a previously-filedU.S. Patent Application by Larry J. Koudele and Bruce A. Liikanen titled“MEMORY DEVICE WITH DYNAMIC PROCESSING LEVEL CALIBRATION.” The relatedapplication is assigned to Micron Technology, Inc., and is identified byapplication Ser. No. 15/605,858, which was filed on May 25, 2017. Thesubject matter thereof is incorporated herein by reference thereto.

This application contains subject matter related to a previously-filedU.S. Patent Application by Larry J. Koudele and Bruce A. Liikanen titled“MEMORY DEVICE WITH DYNAMIC TARGET CALIBRATION.” The related applicationis assigned to Micron Technology, Inc., and is identified by applicationSer. No. 15/605,855, which was filed on May 25, 2017. The subject matterthereof is incorporated herein by reference thereto.

This application contains subject matter related to a previously-filedU.S. Patent Application by Bruce A. Liikanen and Larry J. Koudele titled“MEMORY DEVICE WITH PROGRAMMING CALIBRATION.” The related application isassigned to Micron Technology, Inc., and is identified by applicationSer. No. 15/605,853, which was filed on May 25, 2017. The subject matterthereof is incorporated herein by reference thereto.

This application contains subject matter related to an U.S. PatentApplication by Michael Sheperek, Larry J. Koudele and Steve Kientztitled “MEMORY SYSTEM WITH DYNAMIC CALIBRATION USING A VARIABLEADJUSTMENT MECHANISM.” The related application is assigned to MicronTechnology, Inc., and is identified by application Ser. No. 15/981,796,which was filed on May 16, 2018. The subject matter thereof isincorporated herein by reference thereto.

TECHNICAL FIELD

Embodiments of the disclosure relate generally to memory systems, and,in particular, to memory systems with dynamic calibration using a trimmanagement mechanism.

BACKGROUND

A memory system can be a storage system, such as a solid-state drive(SSD), and can include one or more memory components that store data.For example, a memory system can include memory devices such asnon-volatile memory devices, volatile memory devices, or a combinationof both. In general, a host system can utilize a memory system to storedata at the memory devices of the memory system and to retrieve datastored at the memory system.

BRIEF DESCRIPTION OF THE DRAWINGS

The disclosure will be understood more fully from the detaileddescription given below and from the accompanying drawings of variousembodiments of the disclosure. The drawings, however, should not betaken to limit the disclosure to the specific embodiments, but are forexplanation and understanding only.

FIG. 1 illustrates an example computing environment that includes amemory system in accordance with some implementations of the presentdisclosure.

FIGS. 2A, 2B and 2C illustrate different control settings andcorresponding read levels in accordance with an embodiment of thepresent technology.

FIG. 3 is a flow diagram of an example method for operating the memorysystem of FIG. 1, in accordance with an embodiment of the presenttechnology.

FIG. 4 is a block diagram of an example computer system in whichimplementations of the present disclosure can operate.

DETAILED DESCRIPTION

Aspects of the present disclosure are directed to memory systems fordynamically and continuously calibrating processing levels (e.g., readlevels). A memory system can be a storage system, such as a solid-statedrive (SSD). In some embodiments, the memory system is a hybridmemory/storage system. In general, a host system can utilize a memorysystem that include media, such as one or more memory devices. Thememory devices can include non-volatile memory devices, such as, forexample, negative-and (NAND). The host system can provide write requeststo store data at the memory devices of the memory system and can provideread requests to retrieve data stored at the memory system.

In storing (e.g., writing) and accessing (e.g., reading) theinformation, the memory system can use processing levels to perform theoperation. For example, the memory system can use read level voltages(e.g., read trims) to determine an amount of charge and thecorresponding bit value stored at a read location. However, due tovariations in the storage circuit (e.g., the NAND memory cells), theprocessing levels can differ across the memory devices. Also, theprocessing levels can change as the capacity (e.g., charge-holdingcapability) of each memory device degrades over time and use, such asdue to wear (e.g., break-down in oxide layers of the storage circuit).

Traditionally, the processing levels are tested and calibrated duringthe manufacturing process to account for the circuit variations. Forexample, a first group of read trims (e.g., read level voltage) can beadjusted (e.g., using a predetermined increment) and tested repeateduntil all of the trims in the group satisfy a test condition. As such,all of the trims in the group are unnecessarily tested until the slowestconverging device/group satisfies the test condition.

Aspects of the present disclosure address the above and otherdeficiencies by dynamically managing an optimization trim list duringthe processing level calibration process. For example, in implementingthe continuous read level calibration, the memory system can gathermultiple samples/results (e.g., read results) for each page (e.g., lowerpage (LP), upper page (UP), extra page (XP), top page (TP), etc.) usingdifferent processing levels (e.g., read levels). Using the gatheredsamples, the memory system can calculate a feedback measure, such as anerror count/rate, a representation of a read-window budget (RWB) or adistribution valley, etc., that corresponds to each of the processinglevels for a page type. Accordingly, the memory system can compare theerror measures and adjust the processing level to lower the resultingerror measure.

In adjusting the processing level, the memory system can sampleaccording to a set of read levels that correspond to page types. As aparticular trim level converges on a targeted state (e.g., arepresentation or an estimation of a lowest error measure for thecorresponding memory cell), the memory system can remove the read levelfrom the set. In some embodiments, the memory system can optimize asubset of trims for a particular page type. For example, the memorysystem can iteratively calibrate individual read levels for theparticular page type, and then calibrate the subset together.

Based on the removal, the memory system can reduce the number of readsnecessary in calibrating the remaining trims. The memory system caneliminate subsequent reads/tests for the removed/calibrated trim andsample only the non-converged trims until they are calibrated. As such,the dynamic management of calibration trims can provide reduced testtime in manufacturing, faster re-optimization during deployment,improved resource (e.g., power) efficiency, etc.

FIG. 1 is a block diagram of a computing environment 100 with dynamicprocessing level calibration mechanism configured in accordance with anembodiment of the present technology. The computing environment 100includes a memory system 102. As shown, the memory system 102 includesone or more memory devices 104 (e.g., NAND flash) and a controller 106.The memory system 102 can operably couple the memory devices 104 to ahost device 108 (e.g., an upstream central processor (CPU)). The memorydevices 104 can include circuitry configured to store data and provideaccess to the stored data. The memory devices 104 can be provided assemiconductor, integrated circuits and/or external removable devices incomputers or other electronic devices. The memory devices 104 includesone or more memory regions, or memory units 120. The memory units 120can be individual memory dies, memory planes in a single memory die, astack of memory dies vertically connected with through-silicon vias(TSVs), or the like. In one embodiment, each of the memory units 120 canbe formed from a semiconductor die and arranged with other memory unitdies in a single device package (not shown). In other embodiments, oneor more of the memory units 120 can be co-located on a single die and/ordistributed across multiple device packages. The memory system 102and/or the individual memory units 120 can also include other circuitcomponents (not shown), such as multiplexers, decoders, buffers,read/write drivers, address registers, data out/data in registers, etc.,for accessing and/or programming (e.g., writing) the data and otherfunctionality, such as for processing information and/or communicatingwith the controller 106.

Each of the memory units 120 includes an array of memory cells 122 thateach store data in several ways. The memory cells 122 can include, forexample, floating gate, charge trap, phase change, ferroelectric,magnetoresitive, and/or other suitable storage elements configured tostore data persistently or semi-persistently. The memory cells 122 canbe one-transistor memory cells that can be can be programmed to a targetstate to represent information. For instance, electric charge can beplaced on, or removed from, the charge storage structure (e.g., thecharge trap or the floating gate) of the memory cell 122 to program thecell to a particular data state. The stored charge on the charge storagestructure of the memory cell 122 can indicate a threshold voltage (Vt)of the cell. For example, a single level cell (SLC) can be programmed toa targeted one of two different data states corresponding to differentthreshold voltages which can represent the binary units 1 or 0.

Some memory cells (e.g., flash memory cells) can be programmed to atargeted one of more than two data states. For example, a memory cellthat can be programmed to any one of four states (e.g., represented bythe binary 00, 01, 10, 11) can be used to store two bits of data, andmay be referred to as a multilevel cell (MLC). Still other memory cellscan be programmed to any one of eight data states (e.g., 000, 001, 010,011, 100, 101, 110, 111), permitting the storage of three bits of datain a single cell. Such cells may be referred to as triple level cells(TLC). Even higher number of data states are possible, such as thosefound in quad level cells (QLC), which can be programmed to any one of16 data states (e.g., 0000, 0001, 0010, 0011, 0100, 0101, 0110, 0111,1000, 1001, 1010, 1011, 1100, 1101, 1110, 1111) for storing four bits ofdata. The memory cells 122 capable of storing higher numbers of datastates can provide higher density memories without increasing the numberof memory cells, since each cell can represent more than one bit.

The memory cells 122 can be arranged in rows (e.g., each correspondingto a word line 143) and columns (e.g., each corresponding to a bitline). Each word line 143 can include one or more memory pages 124,depending upon the number of data states the memory cells 122 of thatword line 143 are configured to store. For example, a single word lineof the memory cells 122 that are each configured to store one of twodata states (e.g., SLC memory cells configured to store one bit each)can include a single memory page 124. Alternatively, a single word line143 of the memory cells 122 that are each configured to store one offour data states (e.g., MLC memory cells configured to store two bitseach) can include two memory pages 124. Moreover, within the word line143, pages 124 can be interleaved so that the word line 143 of memorycells 122 that are each configured to store one of two data states(e.g., SLC memory cells) can include two pages, in an “even-odd bit linearchitecture” (e.g., where all the memory cells 122 in odd-numberedcolumns of a single word line 143 are grouped as a first page, and allthe memory cells 122 in even-numbered columns of the same word line 143are grouped as a second page). When even-odd bit line architecture isutilized in the word line 143 of memory cells 122 that are eachconfigured to store larger numbers of data states (e.g., memory cellsconfigured as MLC, TLC, QLC, etc.), the number of pages per word line143 can be even higher (e.g., 4, 6, 8, etc.). Each column can include astring of series-coupled memory cells 122 coupled to a common source.The memory cells 122 of each string can be connected in series between asource select transistor (e.g., a field-effect transistor) and a drainselect transistor (e.g., a field-effect transistor). Source selecttransistors can be commonly coupled to a source select line, and drainselect transistors can be commonly coupled to a drain select line.

The memory system 102 can process data using different groupings of thememory cells 122. For example, the memory pages 124 of the memory cells122 can be grouped into memory blocks 126. In operation, the data can bewritten or otherwise programmed (e.g., erased) with regards to thevarious memory regions of the memory system 102, such as by writing togroups of pages 124 and/or memory blocks 126. In NAND-based memory, awrite operation often includes programming the memory cells 122 inselected memory pages 124 with specific data values (e.g., a string ofdata bits having a value of either logic 0 or logic 1). An eraseoperation is similar to a write operation, except that the eraseoperation re-programs an entire memory block 126 or multiple memoryblocks 126 to the same data state (e.g., logic 1).

In other embodiments, the memory cells 122 can be arranged in differenttypes of groups and/or hierarchies than shown in the illustratedembodiments. Further, while shown in the illustrated embodiments with acertain number of memory cells, rows, columns, blocks, and memory unitsfor purposes of illustration, in other embodiments, the number of memorycells, rows, columns, blocks, and memory units can vary, and can belarger or smaller in scale than shown in the illustrated examples. Forexample, in some embodiments, the memory system 102 can include only onememory unit 120. Alternatively, the memory system 102 can include two,three, four, eight, ten, or more (e.g., 16, 32, 64, or more) memoryunits 120. While the memory units 120 are shown in FIG. 1 as includingtwo memory blocks 126 each, in other embodiments, each memory unit 120can include one, three, four eight, or more (e.g., 16, 32, 64, 100, 128,256 or more memory blocks). In some embodiments, each memory block caninclude, e.g., 215 memory pages, and each memory page within a block caninclude, e.g., 212 memory cells 122 (e.g., a “4k” page).

The controller 106 can be a microcontroller, special purpose logiccircuitry (e.g., a field programmable gate array (FPGA), an applicationspecific integrated circuit (ASIC), etc.), or other suitable processor.The controller 106 can include a processor 130 configured to executeinstructions stored in memory. In the illustrated example, the memory ofthe controller 106 includes an embedded memory 132 configured to performvarious processes, logic flows, and routines for controlling operationof the computing environment 100, including managing the memory system102 and handling communications between the memory system 102 and thehost device 108. In some embodiments, the embedded memory 132 caninclude memory registers storing, e.g., memory pointers, fetched data,etc. The embedded memory 132 can also include read-only memory (ROM) forstoring micro-code. While the exemplary memory device 102 illustrated inFIG. 1 has been illustrated as including the controller 106, in anotherembodiment of the present technology, a memory device may not include acontroller, and may instead rely upon external control (e.g., providedby an external host, or by a processor or controller separate from thememory system).

In the illustrated example, further organization or details of thememory devices 104 is represented with a page map 142. The page map 142can represent groupings, addresses, types, or a combination thereof forthe memory pages 124 for each of the memory blocks 126. For example,each of the memory blocks 126 can include the memory pages 124corresponding to a word-line group 144. Also for example, the memorypages 124 can further correspond to a logical page type 146, such as alower page (LP) 148, an upper page (UP) 150, an extra page (XP) 152, ora top page (TP) (not shown).

The word-line group 144 can include a grouping of the memory pages 124corresponding to one or more word lines 143 used to implement processingfunctions, such as read or write for the data. The word-line group 144can be a grouping of the memory pages 124 for or connected to the wordline 143. The word line 143 can correspond to physical layout orarchitecture of the memory cells 122.

The page type 146, such as for the UP 150, the LP 148, and the XP 152,can represent a grouping of bits in a specific order for the memorypages 124. The types of pages can correspond to a logical layout,architecture, or value for the memory cells 122. For example, the LP 148can represent a first information bit stored in the memory pages 124 orthe memory cells 122 therein. The LP 148 can be for SLC type of cells,MLC type of cells, TLC type of cells, or a combination thereof. Also forexample, the UP 150 can correspond to or represent a second informationbit stored in the memory pages 124 or the memory cells 122 therein. TheUP 150 can be for the TLC or MLC types of the memory cells 122. Also forexample, the XP 152 can represent a third information bit, such as forthe most significant bit or the least significant bit, stored in thememory pages 124 or the memory cells 122 therein. The XP 152 can be forthe TLC type of the memory cells 122.

The memory system 102 can use processing levels 154 for storing oraccessing data. The processing levels 154 can include thresholds oroperating levels for voltage or current. For example, the processinglevels 154 can include a threshold voltage 156, a read level voltage158, a programming level voltage, a programming step, or a combinationthereof. The threshold voltage 156 can be the voltage applied to thecontrol gate at which the circuitry for the memory cells 122 becomesconductive and a current can be measured. The threshold voltage 156 canbe affected and controlled by controlling an amount of charge held in afloating gate or charge trap of the memory cells 122. The memory system102 can store an amount of charge into the memory cells 122 based on theprogramming level voltage to represent a corresponding data value. Thememory system 102 applies the programming level voltage to control gateor word line to charge up the floating gate or the charge trap. Thefloating gate or the charge trap can be electrically isolated, which canenable the memory cell to store and hold the charge.

The memory system 102 can use the stored charge to represent data. Forexample, storing charges on the floating gate or the charge trap can befor storing a bit value of 0 for SLC type cells. A bit value of 1 cancorrespond to the floating gate or the charge trap with no stored chargefor the SLC. In other types of cells, such as for MLC, TLC, or QLC, thememory system 102 can store specific amounts of charge on the floatinggate or the charge trap to represent different bit values. The MLC typeof cell can have four different charge states, TLC can have eightdifferent charge states, and QLC can have 16 different charge states.Each of the charge states can correspond to a unique binary value asdiscussed above.

The memory system 102 can read or determine data values stored in thememory cells 122 using the read level voltage 158 corresponding to thedata value. The memory system 102 can apply the read level voltage 158to the control gate and measure the current or the voltage across thememory cell to read the data stored in the cell. The charges stored inthe floating gate or the charge trap can screen off or offset the amountof charge placed on control gate for reading or accessing the storeddata. As such, with the read level voltage 158 applied, the measured thecurrent or the voltage across the memory cell will correspond to theamount of charges stored in the floating gate or the charge trap.

During operation of the memory system 102, the electricalcharacteristics of the device (i.e. charge retention capabilities) canchange due to repeated data writes, erase, and/or reads. The repeateddata operations can lead to the breakdown or wearing of the dielectricstructure electrically isolating the floating gate or the charge trap(e.g. the oxide layers). To account for the changing electricalcharacteristics of the memory cells 122, the memory system 102 can beconfigured to shift or calibrate the read level voltage 158.

The programming level voltage is associated with the read level voltage158 and the threshold voltage 156. The programming level voltage, theread level voltage 158, the threshold voltage 156 or a combinationthereof can correspond to the number of bits stored in the memory cells122. For example, memory cells 122 configured to store charge in one oftwo possible states (e.g., SLC memory cells) may have associatedprogramming levels, read levels and threshold voltages that aredifferent from those used with of memory cells 122 configured to storecharge in one of four possible states (e.g., MLC memory cells) or memorycells 122 configured to store charge in one of eight possible states(e.g., TLC memory cells). For each type of memory cell (e.g., SLC, MLC,TLC, QLC, etc.), a specific value of the programming level voltage, theread level voltage 158, the threshold voltage 156, or a combinationthereof can be associated with each of the possible data values. Thememory system 102 can iteratively store charge in the memory cells 122for the write or program operation, such as for incremental step pulseprogramming (ISPP). The programming step can include an increment or avoltage value for increasing the stored charge in each iteration.

The processing levels 154 can be stored in the memory system 102, thehost device 108, or a combination thereof. For example, the memorysystem 102 can include one or more level registers 164 on the controller106, the memory devices 104, another memory location of the memorysystem 102, or a combination thereof for storing the processing levels154. The level registers 164 can store the threshold voltage 156, theread level voltage 158, the programming level voltage, the programmingstep, or a combination thereof. The memory system 102, controller 106,and/or the host 108 can access the level registers 164, write or adjustthe values in the level registers 164, or a combination thereof.Similarly, the processing levels 154 can be stored in the embeddedmemory of the controller 106, the memory devices 104, another memorylocation of the memory system 102, or a combination thereof.

The memory system 102 can dynamically calculate or adjust the processinglevels 154 based on feedback information. For example, the memory system102 can continuously update the read level voltage 158 using aprocessing-level calibration mechanism 176. The processing-levelcalibration mechanism 176 can be a process, method, function, circuitry,configuration, or a combination thereof for implementing theabove-mentioned calibration.

For illustrative purposes, the processing-level calibration mechanism176 (e.g., a continuous read-level calibration (cRLC) mechanism) isdescribed below using the read level voltage 158. However, it isunderstood that the processing-level calibration mechanism 176 can beimplemented for the threshold voltage 156 of FIG. 1, the programminglevel voltage, the programming step, or a combination thereof.

The memory system 102 can include a trim management mechanism 182 (e.g.,circuitry, dedicated logic, programmable logic, firmware, etc.) toperform the operations described herein. In some embodiments, thecontroller 106 includes the trim management mechanism 182. For example,the controller 106 can include a processor 130 (processing device)configured to execute instructions stored in local memory 132 forperforming the operations described herein. In some embodiments, thetrim management mechanism 182 is part of the host system 108, anapplication, or an operating system. The trim management mechanism 182can maintain and update a set of trims that will be calibrated, such asby removing trims from the calibration process once they are calibratedand retaining the uncalibrated trims as the subject/target of thecalibration process. In other words, the trim management mechanism 182includes a set of processes/sequences/instructions for maintaining andadjusting tested trim(s) 184. The trim management mechanism 182 can usethe processing-level calibration mechanism 176 to calibrate the testedtrim(s) 184 (e.g., one or more read levels 158) for the word-line group144. When the trim/read level(s) satisfy a condition (e.g., a change intrend/direction of adjustments, such as between increasing anddecreasing or vice versa), the trim management mechanism 182 candetermine the corresponding read level(s) as removed trim(s) 186 andremove them from the tested trim(s) 184.

The trim management mechanism 182 can dynamically change or reduce thelist of read levels that are tested/calibrated. As a result, the memorysystem 102 can reduce the number of reads by eliminating reads forcalibrated levels for subsequent/remaining iterations of theprocessing-level calibration mechanism 176. In some embodiments, forpage types (e.g., MLC, TLC, QLC, etc.) with multiple read levels (e.g.,three, seven, fifteen, etc.), the memory system 102 can calibrate eachof the levels individually, and then calibrate them together as a set.The memory system 102 can remove the set of read levels from the trimlist after the set is calibrated together instead of individuallyremoving the read levels based on the individually calibrating them.

In implementing the processing-level calibration mechanism 176, thememory system 102 can execute the trim management mechanism 182. (e.g.,circuitry, dedicated logic, programmable logic, firmware, etc.) toperform the operations described herein. In some embodiments, thecontroller 106 includes a convergence mechanism 182. For example, thecontroller 106 can include a processor 130 (processing device)configured to execute instructions stored in local memory 132 forperforming the operations described herein. In some embodiments, theconvergence mechanism 182 is part of the host system 108, anapplication, or an operating system. The trim management mechanism 182can use the processing-level calibration mechanism 176 to calibrate aset of the tested trims 184. Accordingly, the memory system 102 can readthe targeted memory cells using the tested trims 184, and then calculateerror measures based on the read results. The trim management mechanism182 can adjust the tested trims 184 according to a direction (e.g.,increase or decrease) that lowers the error measure. During theiterative adjustment of the tested trims 184, the trim managementmechanism 182 can determine when one or more of the trims satisfy acalibration condition (e.g., a dither, such as a change in theadjustment direction across iterations). When one or more of the testedtrims 184 satisfy the calibration condition, the trim managementmechanism 182 can remove the calibrated trim from the set of the testedtrims 184. For subsequent iterations, the memory system 102 can continuecalibration of the remaining set of the tested trims 184 without readingwith the calibrated trims.

FIGS. 2A, 2B, and 2C illustrate different example control settings andcorresponding example read levels in accordance with an embodiment ofthe present technology. In this regard, FIGS. 2A-2C illustrate a set ofiterations implementing the trim management mechanism 182 of FIG. 1based on determining the removed trim(s) 186 of FIG. 1 and managing thetested trim(s) 184 of FIG. 1. FIGS. 2A-2C each show a trim distributionprofile 202 corresponding to the tested trim(s) 184.

The trim distribution profile 202 illustrates a distribution ofprogram-verify (PV) levels according to the current behavior of agrouping of the memory cells, such as for a page (e.g., a TLC page), alogical or stored value, a word-line group, a word line, a die, or acombination thereof. For a TLC page, as illustrate in FIGS. 2A-2C, thetrim distribution profile 202 can correspond to the LP 148, the UP 150,and the XP 152, all shown in FIG. 1. The distributions can represent anumber of occurrences for a specific trim level (e.g., read level) alonga vertical direction or axis. The example illustrations show voltagelevels along a horizontal direction or axis. The distributions cancorrespond to gray codes (e.g., logical values ‘111,’ ‘011,’ ‘110,’etc.), level groupings (e.g., ‘L0,’ ‘L1,’ ‘L7,’ etc.), a correspondingfunction/operation, such as an erase operation that sets all bits to ‘1’and sets the threshold voltage (Vt) below a threshold (e.g., the lowestthreshold/read level), or a combination thereof.

The trim distribution profile 202 can include or represent distributiontraces that show counts/quantities of different threshold voltages. Thedistribution traces can form a convex shape for each level (e.g., one ofL0-L7) or bit value combination. The trim distribution profile 202 canfurther include or represent one or more distribution valleys thatcorrespond to an intersection, a separation, an overlap, or acombination thereof between two adjacent distribution targets. Thedistribution valleys can each be between, at the boundary of, or acombination thereof between two adjacent instances of distributiontraces. The distribution valleys can include read level voltages (e.g.,different levels of the read level voltage 158).

For TLC pages, such as illustrated in FIGS. 2A-2C, there can be 7valleys. The distribution valleys are each identified with a valleyidentification, such as v1-v7 shown in FIG. 2A. Each valley cancorrespond to a unique division or threshold for the LP 148, the UP 150,and the XP 152, which can be utilized to determine the content stored inthe corresponding cells. Each of the distribution valleys can associatedwith different read level voltages (e.g., RL1-RL7) used to determine theLP 148, the UP 150, the XP 152, the bit value at the correspondinglocation, or a combination thereof. For TLC pages, there can be 7different read level voltages, such as RL1-RL7 shown in FIG. 2A-2C. Forexample, RL1 can correspond to a first XP read level, RL2 can correspondto a first UP read level, RL3 can correspond to a second XP read level,RL4 can correspond to a LP read level, RL5 can correspond to a third XPread level, RL6 can correspond to a second UP read level, and RL7 cancorrespond to a fourth XP read level.

The trim management mechanism 182 can utilize an optimization trim list204 to manage the tested trim(s) 184. The optimization trim list 204 canbe implemented using the level register 164 of FIG. 1 or otherregisters/memory components associated with the level register 164. Forexample, the optimization trim list 204 can be implemented according tosoftware/firmware and stored within the level register 164, the embeddedmemory 132 of FIG. 1, or a combination thereof.

The optimization trim list 204 can include a list that stores the trimlevels (e.g., the tested trim(s) 184) being tested/calibrated for theprocessing-level calibration mechanism 176 of FIG. 1. Once the trimlevels are calibrated (e.g., centered), the trim levels can bedetermined as the removed trim(s) 186 and deleted from the optimizationtrim list 204.

In some embodiments, the trim management mechanism 182 can manage thetested trims according to the page type 146 of FIG. 1. For example, thetrim management mechanism 182 can manage the tested trim(s) 184according to page stacks 206. Each of the page stacks 206 can correspondto the read levels (e.g., RL2 for the first UP read level and RL6 forthe second UP read level) for the UP 150 of FIG. 1, the read levels(e.g., RL1, RL3, RL5, and RL7 corresponding to the four XP read levels)for the XP 152 of FIG. 1, etc. In some embodiments, the optimizationtrim list 204 can include the page stacks 206 ordered or sequencedaccording to a predetermined sequence, such as for a calibrationsequence.

The optimization trim list 204 can correspond to a trim set 208, such asfor one instance of the word-line group 144 of FIG. 1. In response toread commands, such as from the controller 106 of FIG. 1, the memorycells of the word-line group 144 can be read using the read levelsspecified in the trim set 208. For example, to calibrate the read levelsfor the word-line group 144, the trim set 208 can be initially loadedinto the optimization trim list 204. As the read levels are calibratedusing/during the processing-level calibration mechanism 176, the trimmanagement mechanism 182 can remove the centered read level from theoptimization trim list 204.

In some embodiments, as illustrated in FIG. 2A, the memory system 102can select a specific set of memory cells, such as for an instance ofthe word-line group 144, in implementing the processing-levelcalibration mechanism 176. The memory system 102 can load into theoptimization trim list 204 the full trim set 208 for the word-line group144. The memory system 102 can implement the processing-levelcalibration mechanism 176 and calibrate the tested trim(s) 184 in theoptimization trim list 204. In some embodiments, the memory system 102can select one of the trims, such as a target trim 210, in theoptimization trim list 204 as a target of the calibration process.

The memory system 102 can iteratively calibrate the read levels (e.g.,one or more of the trims, such as the target trim 210, in theoptimization trim list 204) using the processing-level calibrationmechanism 176. The memory system 102 (e.g., the controller 106 and/orthe memory devices 104 of FIG. 1) can perform multiple reads on thetargeted memory cells using a set of test levels that correspond to eachof the read levels/valleys. For example, the memory system 102 can readthe memory cells using the target trim 210 (e.g., a center read level),a lower read level below the center read level by an offset value, ahigher read level above the center read level by the offset value, etc.The memory system 102 can calculate error measures based on the set ofread levels, such as error counts, BERs, differences in the errorcounts/rates between left and right relative to the center, etc. Basedon the error measures, the memory system 102 can adjust (e.g., increaseor decrease) the read level/trim in a direction that corresponds to thelower read count. In some embodiments, the memory system 102 candetermine/estimate that the tested trim corresponds to the lowest errormeasure (e.g., centered) when the direction/pattern of the adjustmentschanges or dithers.

When the trim level (e.g., a centered trim 212) is determined as beingcentered, the memory system 102 can determine the centered trim level212 as a removed trim 214 and remove it from the optimization trim list204. As illustrated in FIG. 2B, the memory system 102 can determine thatRL2 is centered, as represented as ‘C.’ In such case, the centered trimlevel 212 can be the calibrated trim value or the calibrated read levelvoltage of RL2. The memory system 102 can further determine the RL2 slotor the read level corresponding to v2 as the removed trim 214. Thememory system 102 can generate a trim removal indicator 216 (e.g., apointer, a status bit, an entry in a separate removed list, etc.) thatcorresponds to the removed trim 214, such as RL2. Using the trim removalindicator 216, the memory system 102 can identify certain trims in theoptimization trim list 204 are centered, and thus, no longer needs to becalibrated. Effectively, using the trim removal indicator 216, thememory system 102 can generate a reduced trim list 218 (e.g., a listingof remaining non-centered read levels) for replacing an initial or aprevious instance of the optimization trim list 204.

As illustrated in FIG. 2C, the memory system 102 can remove the pagestacks 206 when all of the trim levels for the page type have beencentered. In some embodiments, the memory system 102 can remove the trimlevels immediately as they are centered. In some embodiments, the memorysystem 102 can first individually test/calibrate the trims in the pagestack. When the trims have been centered through individual calibrationprocess, the memory system 102 can calibrate all of the trims in thepage stack as a set. When the set of read levels for the page type iscentered, the memory system 102 can determine them as the removed trims.Accordingly, the corresponding trims for the page type can be removedfrom the optimization trim list 204. For subsequent iterations of theprocessing-level calibration mechanism 176, the memory system 102 cancalibrate the remaining read levels without processing the removedtrims.

In some embodiments, the memory system 102 of FIG. 1 can read thetargeted memory cells according to the optimization trim list 204 inimplementing the processing-level calibration mechanism 176. In someembodiments, the memory system 102 can process the read results for thetrim levels in the optimization trim list 204. Accordingly, theoptimization trim list 204 can remove the calibrated read levels so thatthey are no longer read/processed in calibrating the rest of the readlevels. Based on removing the calibrated/centered read levels, the trimmanagement mechanism 182 can reduce the computing resources necessary toimplement the processing-level calibration mechanism 176.

FIG. 3 is a flow diagram illustrating an example method 300 of operatingthe memory system 100 in FIG. 1 in accordance with an embodiment of thepresent technology. The method 300 can be performed by processing logicthat can include hardware (e.g., processing device, circuitry, dedicatedlogic, programmable logic, microcode, hardware of a device, integratedcircuit, etc.), software (e.g., instructions run or executed on aprocessing device), or a combination thereof. In some embodiments, themethod 300 is performed by the trim management mechanism 182 of FIG. 1.Although shown in a particular sequence or order, unless otherwisespecified, the order of the processes can be modified. Thus, theillustrated implementations should be understood only as examples, andthe illustrated processes can be performed in a different order, andsome processes can be performed in parallel. Additionally, one or moreprocesses can be omitted in various embodiments. Thus, not all processesare required in every implementation. Other process flows are possible.

At block 302, the processing device selects a grouping of the memorycells 122 of FIG. 1 as a target of the calibration process. For example,the processing device can select one of the memory pages 124 of FIG. 1,the word-line group 144 of FIG. 1, etc. that is fully-programmed. Theselected page can correspond to one or more page types based on the typeof selected cells, such as for SLC, MLC, and TLC. The selected page canfurther correspond to one of the word-line groups 144 and the word line143, both of FIG. 1. The page selection can be made randomly,iteratively, or a combination thereof. In some embodiments, theprocessing device can select the page randomly, such as according to aset of instructions/processes for making random selections. In someembodiments, the processing device can select the page according to apredetermined order. The processing device can also select the pagebased on iteratively selecting through the available/fully-programmedpages.

At block 304, the processing device gets the trim set. The processingdevice can get the trim set of the targeted memory cells, such that thetrim set can be calibrated using the subsequent steps. In someembodiments, the processing device can access the level register 164 ofFIG. 1, the optimization trim list 204, or a combination thereof thatcorresponds to the selected memory cells 122 to get the trim set. Insome embodiments, the processing device can access the level register164 to get the trim set 208 of FIG. 2 that corresponds to the targetedmemory pages, and then load the trim set 208 into the optimization trimlist 204.

At block 306, the processing device samples (e.g., read) the data usingthe selected set of processing values/levels. For example, theprocessing device can select the target trim 210 of FIG. 2 from withinthe trim set 208 or the optimization trim list 204, and calculate afirst offset level (e.g., offset from the target trim 210 along adirection), a second offset level (e.g., offset from the target trim 210along an opposite direction), etc. based on the target trim 210 and/or apredetermined offset measure. The processing device and/or the memoryarray 104 can read the selected grouping of the memory cells 122 usingthe set of read level voltages (e.g., the target trim 210 or the centerlevel, the first offset level, the second offset level, etc.). In someembodiments, the processing device can issue multiple commands forreading the selected memory cells, such as a command for reading withthe target trim 210, a command for reading with the first offset level,and a command for reading the second offset level. In some embodiments,the processing device can issue one command that initiates a process(e.g., a read-offset mechanism) in the memory devices 104 that performsthe multiple reads using the set of read level voltages.

According to the multiple commands and/or the preconfigured process ofthe memory devices 104, the memory devices 104 can generate the readresults according to the target trim 210 and the associated offsetlevel(s). For example, the memory devices 104 can generate the centerresult based on reading with the target trim 210, the first offsetresult based on reading with the first offset level, the second offsetresult based on reading with the second offset level, etc. Theprocessing device can determine the set of read results based onreceiving the read results from the memory devices 104.

The memory system 102 can further analyze the read results. For example,the memory system 102 (e.g., the controller 106) can analyze thedetermined results and calculate an update direction. The processingdevice can calculate the error measure (e.g., the error count or theBER) corresponding to each of the target trim 210, the first offsetlevel, the second offset level, etc. In some embodiments, the processingdevice can calculate one or more differences in the error measures, suchas a difference between error measures (e.g., a representation of RWB)corresponding to the center result and the first offset result, adifference between error measures corresponding to the center result andthe second offset result, etc.

The processing device can calculate the update direction based on theanalysis results (e.g., the error measures or the differences in theerror measures). In some embodiments, the processing device cancalculate the update direction as a direction, such as either positive(e.g., for increasing the read level) or negative (e.g., for decreasingthe read level), that reduces the error measure. For example, theprocessing device can calculate the update direction as positive whenthe error measure for the first offset level is less than the errormeasure for the center result, than that for the second offset level, orboth. Also, the processing device can calculate the update direction asnegative when the error measure for the second offset level is less thanthe error measure for the center result, than that for the first offsetlevel, or both.

The memory system 102 can store the update direction as a previousdirection for access across iterations. At the next subsequentiteration, the memory system 102 can access the stored update directionas the previous direction 330.

At block 308, the processing device updates the trim according to theanalysis results. For example, the processing device can update thetarget trim 210 in the update direction and either increase or decreasethe read level voltage 158 corresponding to the page type, the word-linegroup, or a combination thereof of the selected memory cells. In someembodiments, the processing device can adjust the target trim 210 by apredetermined amount (e.g., n clicks). In some embodiments, theprocessing device can calculate an adjustment magnitude, such as basedon the error measures, a trend thereof, etc.

At decision block 310, the processing device determines whether thetarget trim 210 satisfies a break-loop condition. For example, theprocessing device can estimate whether the target trim 210 is centered,such as at or near the bottom of the error/read-level plot. In someembodiments, the processing device can estimate that the target trim 210is centered based on determining a dither status. The processing devicecan determine the dither status when the current update directiondiffers from the previous update direction (e.g., the update directionof the preceding iteration), such as between an increase and a decreaseor vice versa.

When the processing device does not identify the break-loop condition,the processing device returns to block 306. The processing device cansample with the updated trim levels and analyze the correspondingresults. Accordingly, the processing device can iteratively calibratethe target trim until the break-loop condition is satisfied.

When the break-loop condition is identified, the processing device canmanage/adjust the optimization trim list 204. In some embodiments, theprocessing device can calibrate the trims according to the correspondingpage types. The processing device can calibrate the trims as a set usingthe page stack 206 of FIG. 2. In some embodiments, the processing devicecan individually calibrate all of the trims in the page stack 206, andthen calibrate the trims together as a single set.

For example, at decision block 312, the processing device can determinewhether the centered trim is last of the trim set for the correspondingpage type. In other words, for the page stack 206 that includes thecentered target trim, the processing device can determine whether all ofthe other trims within the page stack 206 have been processed andcentered. When the processing device determines that not all of thetrims have been individually centered, as illustrated at block 314, theprocessing device can update the target trim 210 as the next trim withinthe page stack 206. With the updated target trim 210, the processingdevice can return to block 306. Accordingly, the processing device caniteratively calibrate the individual trims within the page stack 206until all of the trims (e.g., a set of read levels for the UP, such asUP1/RL2 and UP2/RL6, or a set of read levels for the XP, etc.) have beenprocessed and centered. In some embodiments, processing device can trackthe status of the trims in the page stack 206 using a predeterminedprocessing sequence and the trim location within the sequence, a statusindicator, etc.

Continuing with the example, when all of the trims have beenindividually centered, the processing device can process the trimswithin the page stack 206 as a set. At block 316, the processing deviceoptimizes or calibrates the trims of the page stack 206 together. Forexample, the processing device can sample (e.g., using a center level,upper offset level, lower offset level, etc.) and analyze the readresults for each/all of the trims in the page stack 206. The processingdevice can aggregate the error measure for the trim set and calculate adirection. The processing device can adjust the trims according to thedirection until the trim set is centered.

At block 318, the processing device removes the centered trims from theoptimization trim list 204. For example, the processing device canupdate the optimization trim list 204 by generating the trim removalindicator 216 of FIG. 2 for the centered trim(s). In some embodiments,the controller 106 can generate the trim removal indicator 216 for thepage stack 206 and/or remove the page stack 206 from the optimizationtrim list 204 following the process represented by block 316. In someembodiments, the flow can pass directly from block 310 to block 318 formanaging/adjusting the optimization trim list 204. Accordingly, thetarget trim 210 can be removed individually, regardless of the status ofother trims in the same page stack 206, when the target trim 210 dithersduring the iterative adjustments as determined at block 310.

At decision block 320, the processing device determines whether all ofthe trims for all page types have been calibrated. For example, theprocessing device can determine whether or not the optimization trimlist 204 is empty. If all of the trims have not been calibrated and theoptimization trim list 204 is not empty, the processing device can loadthe next trim as the target trim 210 as illustrated in block 322. Insome embodiments, the processing device can load the next trim as thefirst trim of the next page stack. The processing device can load thetrim according to a predetermined sequence. After updating the targettrim 210, the processing device can return to block 306. Accordingly,the memory system 102 can iteratively calibrate the trims and thenremove them from the optimization trim list 204 until the list is empty.

When the optimization trim list 204 is empty, such as illustrated atdecision block 324, the memory system 102 (e.g., the controller 106) candetermine whether trims for all of the memory cells targeted by theprocessing-level calibration mechanism 176 have been calibrated. Ifthere are remaining memory cells, such as for a set of word-line groups,a collection of pages, a memory block/die, etc., the processing devicecan return to block 302. Accordingly, the processing device caniteratively select the next set of memory cells and calibrate thecorresponding trims as discussed above until trims have been calibratedfor all of the targeted memory cells.

Using the optimization trim list 204 in implementing theprocessing-level calibration mechanism 176 provides reduction in overallnumber of reads for the calibration process. The processing device canmanage the optimization trim list 204 to include only the uncalibratedtrims by removing the trims once they have been centered. The processingdevice can use the optimization trim list 204 to perform the readsinstead of reading according to the trim set 208. Accordingly, theprocessing device can sample only the non-converged trims until they arecentered/calibrated. Thus, the processing device can eliminate anysubsequent reads for the trim once it becomes centered/calibrated. Thereduction in the number of reads is further highlighted when one or asmall number of trims are significantly off center, thus requiring manysamples to converge. In converging the outlying trims, all othercentered trims will continue to re-sample without the optimization trimlist 204. Reading the other centered trims provides no new information.Thus, using the optimization trim list 204 to read only the uncalibratedtrims can reduce the number of reads and the associated data acquisitiontime.

FIG. 4 illustrates an example machine of a computer system 400 withinwhich a set of instructions, for causing the machine to perform any oneor more of the methodologies discussed herein, can be executed. In someimplementations, the computer system 400 can correspond to a host system(e.g., the host 108 of FIG. 1) that includes or utilizes a memory system(e.g., the memory system 102 of FIG. 1) or can be used to perform theoperations of a controller (e.g., to execute an operating system toperform operations corresponding to the trim management mechanism 182 ofFIG. 1). In alternative implementations, the machine can be connected(e.g., networked) to other machines in a LAN, an intranet, an extranet,and/or the Internet. The machine can operate in the capacity of a serveror a client machine in client-server network environment, as a peermachine in a peer-to-peer (or distributed) network environment, or as aserver or a client machine in a cloud computing infrastructure orenvironment.

The machine may be a personal computer (PC), a tablet PC, a set-top box(STB), a Personal Digital Assistant (PDA), a cellular telephone, a webappliance, a server, a network router, a switch or bridge, or anymachine capable of executing a set of instructions (sequential orotherwise) that specify actions to be taken by that machine. Further,while a single machine is illustrated, the term “machine” shall also betaken to include any collection of machines that individually or jointlyexecute a set (or multiple sets) of instructions to perform any one ormore of the methodologies discussed herein.

The example computer system 400 includes a processing device 402, a mainmemory 404 (e.g., read-only memory (ROM), flash memory, dynamic randomaccess memory (DRAM) such as synchronous DRAM (SDRAM) or Rambus DRAM(RDRAM), etc.), a static memory 406 (e.g., flash memory, static randomaccess memory (SRAM), etc.), and a data storage system 418, whichcommunicate with each other via a bus 430.

Processing device 402 represents one or more general-purpose processingdevices such as a microprocessor, a central processing unit, or thelike. More particularly, the processing device can be a complexinstruction set computing (CISC) microprocessor, reduced instruction setcomputing (RISC) microprocessor, very long instruction word (VLIW)microprocessor, or a processor implementing other instruction sets, orprocessors implementing a combination of instruction sets. Processingdevice 402 can also be one or more special-purpose processing devicessuch as an application specific integrated circuit (ASIC), a fieldprogrammable gate array (FPGA), a digital signal processor (DSP),network processor, or the like. The processing device 402 is configuredto execute instructions 426 for performing the operations and stepsdiscussed herein. The computer system 400 can further include a networkinterface device 408 to communicate over the network 420.

The data storage system 418 can include a machine-readable storagemedium 424 (also known as a computer-readable medium) on which is storedone or more sets of instructions or software 426 embodying any one ormore of the methodologies or functions described herein. Theinstructions 426 can also reside, completely or at least partially,within the main memory 404 and/or within the processing device 402during execution thereof by the computer system 400, the main memory 404and the processing device 402 also constituting machine-readable storagemedia. The machine-readable storage medium 424, data storage system 418,and/or main memory 404 can correspond to the memory system 102 of FIG.1.

In one implementation, the instructions 426 include instructions toimplement functionality corresponding to a trim management mechanism(e.g., the trim management mechanism 182 of FIG. 1). While themachine-readable storage medium 424 is shown in an exampleimplementation to be a single medium, the term “machine-readable storagemedium” should be taken to include a single medium or multiple mediathat store the one or more sets of instructions. The term“machine-readable storage medium” shall also be taken to include anymedium that is capable of storing or encoding a set of instructions forexecution by the machine and that cause the machine to perform any oneor more of the methodologies of the present disclosure. The term“machine-readable storage medium” shall accordingly be taken to include,but not be limited to, solid-state memories, optical media, and magneticmedia.

Some portions of the preceding detailed descriptions have been presentedin terms of algorithms and symbolic representations of operations ondata bits within a computer memory. These algorithmic descriptions andrepresentations are the ways used by those skilled in the dataprocessing arts to most effectively convey the substance of their workto others skilled in the art. An algorithm is here, and generally,conceived to be a self-consistent sequence of operations leading to adesired result. The operations are those requiring physicalmanipulations of physical quantities. Usually, though not necessarily,these quantities take the form of electrical or magnetic signals capableof being stored, combined, compared, and otherwise manipulated. It hasproven convenient at times, principally for reasons of common usage, torefer to these signals as bits, values, elements, symbols, characters,terms, numbers, or the like.

It should be borne in mind, however, that all of these and similar termsare to be associated with the appropriate physical quantities and aremerely convenient labels applied to these quantities. The presentdisclosure can refer to the action and processes of a computer system,or similar electronic computing device, that manipulates and transformsdata represented as physical (electronic) quantities within the computersystem's registers and memories into other data similarly represented asphysical quantities within the computer system memories or registers orother such information storage systems.

The present disclosure also relates to an apparatus for performing theoperations herein. This apparatus can be specially constructed for theintended purposes, or it can include a general purpose computerselectively activated or reconfigured by a computer program stored inthe computer. Such a computer program can be stored in a computerreadable storage medium, such as, but not limited to, any type of diskincluding floppy disks, optical disks, CD-ROMs, and magnetic-opticaldisks, read-only memories (ROMs), random access memories (RAMs), EPROMs,EEPROMs, magnetic or optical cards, or any type of media suitable forstoring electronic instructions, each coupled to a computer system bus.

The algorithms and displays presented herein are not inherently relatedto any particular computer or other apparatus. Various general purposesystems can be used with programs in accordance with the teachingsherein, or it can prove convenient to construct a more specializedapparatus to perform the method. The structure for a variety of thesesystems will appear as set forth in the description below. In addition,the present disclosure is not described with reference to any particularprogramming language. It will be appreciated that a variety ofprogramming languages can be used to implement the teachings of thedisclosure as described herein.

The present disclosure can be provided as a computer program product, orsoftware, that can include a machine-readable medium having storedthereon instructions, which can be used to program a computer system (orother electronic devices) to perform a process according to the presentdisclosure. A machine-readable medium includes any mechanism for storinginformation in a form readable by a machine (e.g., a computer). In someimplementations, a machine-readable (e.g., computer-readable) mediumincludes a machine (e.g., a computer) readable storage medium such as aread only memory (“ROM”), random access memory (“RAM”), magnetic diskstorage media, optical storage media, flash memory devices, etc.

In the foregoing specification, implementations of the disclosure havebeen described with reference to specific example implementationsthereof. It will be evident that various modifications can be madethereto without departing from the broader spirit and scope ofimplementations of the disclosure as set forth in the following claims.The specification and drawings are, accordingly, to be regarded in anillustrative sense rather than a restrictive sense.

We claim:
 1. A system, comprising: a memory device comprising aplurality of memory cells configured to store data; and a processingdevice coupled to the memory device, the processing device configured toiteratively: calibrate read levels based on associated results ofreading the data stored in one or more of the plurality of memory cells,wherein the read levels are tracked via optimization target data that atleast initially includes at least one read level in addition to a targettrim, and a trim comprises a read level voltage used to read a portionof the plurality of memory cells; and remove a calibrated read levelfrom the optimization target data when the calibrated read levelsatisfies a calibration condition.
 2. The system of claim 1, wherein theprocessing device is configured to determine a subsequent set of readresults after the calibrated read level satisfies the calibrationcondition, wherein the subsequent set of the read results are determinedbased on reading according to the read level without the target trim. 3.The system of claim 1, wherein: the optimization target data comprisesthe read levels according to page stacks, wherein each of the pagestacks comprise a set of read levels for a corresponding page type andthe target trim corresponds to a page stack; and the processing deviceis configured to remove the page stack that comprises the target trimwhen trims within the page stack are calibrated.
 4. The system of claim3, wherein the processing device is configured to: individuallycalibrate the trims within the page stack; and calibrate the trimswithin the page stack as a single set after the trims have beenindividually calibrated.
 5. The system of claim 4, wherein theprocessing device is configured to calibrate the trims within the pagestack as a set by: determining the read results based on reading asubset of memory cells according to the trims within the page stack;calculating an error measure based on aggregating the set of readresults; determining an adjustment direction based on the error measure;and adjusting the trims within the page stack according to theadjustment direction until the calibration condition is satisfied. 6.The system of claim 1, wherein the processing device is configured tocalibrate the read level based on: selecting the target trim as one ofthe read levels within the optimization target data; determining theread results based on reading a subset of memory cells using the targettrim, an upper read level greater than the target trim, and a lower readlevel less than the target trim; calculating a set of error measurescorresponding to the set of read results, wherein the set of errormeasures comprises error measures that correspond to the target trim,the upper read level, and the lower read level; calculating a firstdifference measure and a second difference measure based on the set oferror measures, wherein the first difference measure is a differencebetween the error measures of the upper read level and the target trimand the second difference measure is a difference between the errormeasures of the lower read level and the target trim; determining anupdate direction corresponding to lower of the first difference measureand the second difference measure, wherein the update direction is fordecreasing the target trim when the first difference measure is lower orfor increasing the target trim when the second difference measure islower; and adjusting the target trim according to the update direction.7. The system of claim 6, wherein the processing device is configuredto: store a previous direction at a previous iteration, wherein theprevious direction is the update direction determined at the previousiteration preceding a current iteration; determine the update directionfor the current iteration; and determine that the target trim satisfiesthe calibration condition when the update direction for the currentiteration differs from the previous direction of the previous iteration.8. The system of claim 1, wherein the processing device is configured toremove the calibrated read level based on generating a trim removalindicator for the target trim when the target trim satisfies thecalibration condition.
 9. The system of claim 1, wherein the processingdevice is configured to remove the calibrated read level based ongenerating a reduced trim data for replacing the optimization targetdata, wherein the reduced trim data comprises trims in the optimizationtarget data without the calibrated read level.
 10. The system of claim1, wherein the processing device is configured to remove the calibratedread level when the target trim satisfies the calibration condition andindependent of a calibration status of other read levels within theoptimization target data.
 11. A method comprising calibrating readlevels in a trim set based on iteratively: calibrating read levels basedon associated results of reading the data stored in one or more of theplurality of memory cells, wherein the read level are tracked viaoptimization target data that at least initially includes at least oneread level in addition to a target trim, and a trim comprises a readlevel voltage used to read a portion of the plurality of memory cells;and removing a calibrated read level from the optimization target datawhen the calibrated read level satisfies a calibration condition. 12.The method of claim 11, wherein the trim set corresponds to a subset ofmemory cells within a memory system and includes the read levels. 13.The method of claim 11, wherein: the optimization target data comprisesa page stack that includes the read levels for a page type, wherein thepage stack includes the target trim; and removing the calibrated readlevel comprises removing the page stack when the read levels in the pagestack are calibrated.
 14. The method of claim 13, wherein calibratingthe read levels comprises: individually calibrating the trims within thepage stack; and calibrating the trims within the page stack as a singleset after the trims have been individually calibrated.
 15. The method ofclaim 14, wherein calibrating the trims within the page stack as asingle set comprises iteratively: determining the read results based onreading a subset of memory cells according to the trims within the pagestack; calculating an error measure based on aggregating the set of readresults; determining an adjustment direction based on the error measure;and adjusting the trims within the page stack as a single set accordingto the adjustment direction until the calibration condition issatisfied.
 16. The method of claim 11, wherein calibrating the readlevels comprises: selecting the target trim as one of the read levelswithin the optimization target data; determining a set of read resultsbased on reading a subset of memory cells using the target trim, anupper read level greater than the target trim, and a lower read levelless than the target trim; calculating a set of error measurescorresponding to the set of read results, wherein the set of errormeasures comprises error measures that correspond to the target trim,the upper read level, and the lower read level; calculating a firstdifference measure and a second difference measure based on the set oferror measures, wherein the first difference measure is a differencebetween the error measures of the upper read level and the target trimand the second difference measure is a difference between the errormeasures of the lower read level and the target trim; determining anupdate direction corresponding to lower of the first difference measureand the second difference measure, wherein the update direction is fordecreasing the target trim when the first difference measure is lower orfor increasing the target trim when the second difference measure islower; and adjusting the target trim according to the update direction.17. The method of claim 16, further comprising: storing a previousdirection at a previous iteration, wherein the previous direction is theupdate direction determined at the previous iteration preceding acurrent iteration; wherein: determining the update direction comprisesdetermining the update direction for the current iteration; and removingthe calibrated read level comprises removing the target trim when theupdate direction for the current iteration differs from the previousdirection of the previous iteration.
 18. The method of claim 11,wherein: removing the calibrated read level comprises generating a trimremoval indicator for the target trim when the target trim satisfies thecalibration condition; and further comprising: determining a subsequentset of read results while ignoring the calibrated read levelcorresponding to the trim removal indicator.
 19. The method of claim 11,wherein: removing the calibrated read level comprises generating areduced trim data for replacing the optimization target data, whereinthe reduced trim data includes trims in the optimization target datawithout the calibrated read level; and further comprising: determining aset of subsequent results based on reading a subset of memory cellsaccording to the reduced trim data instead of the optimization targetdata after calibration of the calibrated read level.
 20. The method ofclaim 11, wherein removing the calibrated read level comprises removingthe calibrated read level independent of a calibration status of otherread levels within the optimization target data.